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E-BLOW: E-Beam Lithography Overlapping aware Stencil Planning for MCC System

机译:E-BLOW:用于mCC的电子束光刻重叠感知模板规划   系统

摘要

Electron beam lithography (EBL) is a promising maskless solution for thetechnology beyond 14nm logic node. To overcome its throughput limitation,recently the traditional EBL system is extended into MCC system. %to furtherimprove the throughput. In this paper, we present E-BLOW, a tool to solve theoverlapping aware stencil planning (OSP) problems in MCC system. E-BLOW isintegrated with several novel speedup techniques, i.e., successive relaxation,dynamic programming and KD-Tree based clustering, to achieve a good performancein terms of runtime and solution quality. Experimental results show that,compared with previous works, E-BLOW demonstrates better performance for bothconventional EBL system and MCC system.
机译:电子束光刻(EBL)是一种有前景的无掩模解决方案,适用于14nm逻辑节点以外的技术。为了克服其吞吐量限制,最近将传统的EBL系统扩展为MCC系统。 %以进一步提高吞吐量。在本文中,我们介绍了E-BLOW,这是一种解决MCC系统中重叠模板设计(OSP)问题的工具。 E-BLOW与几种新颖的加速技术集成在一起,即连续松弛,动态编程和基于KD-Tree的聚类,从而在运行时和解决方案质量方面实现了良好的性能。实验结果表明,与以往的工作相比,E-BLOW在常规EBL系统和MCC系统上均表现出更好的性能。

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